NCV33152DR2G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NCV33152DR2G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW23395789
Category

FET Driver
Package

SOIC-8
Description

NCV Series 1.5A 20V 100KΩ SMT High Speed Dual MOSFET Driver - SOIC-8
Documentation

Datasheet

NCV33152DR2G Global Supplier

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NCV33152DR2G Specifications

Attribute	Attribute Value

Part Number	NCV33152DR2G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW23395789
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	18.0V (max)
Rise/Fall Time	36ns, 32ns
Halogen Free Status	Halogen Free
Number of Outputs	2 Output
Output Current	1.5 A
Number of Positions	8 Position
Power Dissipation	560 mW
Rise Time	36 ns
Output Current (Max)	1.5 A
Fall Time	32 ns
Fall Time (Max)	32 ns
Fall Time (Max)	36 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	560 mW
Supply Voltage	6.1V ~ 18V
Supply Voltage (Max)	18 V
Supply Voltage (Min)	6.1 V
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Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Sleep easy by implementing this NCV33152DR2G power driver by ON Semiconductor. This device has a maximum propagation delay time of 55(typ) ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V. This gate driver has an operating temperature range of -40 °C to 125 °C.

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