NDB6030PL - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDB6030PL
Manufacturer

Fairchild
ChipWorker Part#

CW91621970
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

FAIRCHILD SEMICONDUCTOR NDB6030PL MOSFET Transistor, P Channel, -30A, -30V, 37mohm, -4.5V, -1.4V
Documentation

Datasheet

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NDB6030PL Specifications

Attribute	Attribute Value

Part Number	NDB6030PL
Manufacturer	Fairchild
ChipWorker Part#	CW91621970
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	-30.0 V
Current Rating	-30.0 A
Drain to Source Resistance (on) (Rds)	0.037 Ω
Polarity	P-Channel
Power Dissipation	75 W
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Gate to Source)	±16.0 V
Continuous Drain Current (Ids)	-30.0 A
Rise Time	60 ns
Input Capacitance (Ciss)	1570pF @15V(Vds)
Input Power (Max)	75 W
Fall Time	52 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	75W (Tc)
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	11.33 mm
Operating Temperature	-65℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

General Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switchingcircuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
-30 A, -30 V. RDS(ON)= 0.042 W@ VGS= -4.5V
RDS(ON)= 0.025 W@ VGS= -10 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell designfor extremely low RDS(ON).
175°C maximum junction temperature rating.

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