NDC7001C - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDC7001C
Manufacturer

Fairchild
ChipWorker Part#

CW10294633
Category

MOSFET, MOSFET Transistor
Package

TSOT-23-6
Description

Trans MOSFET N/P-CH 60V 0.51A/0.34A 6Pin SuperSOT T/R
Documentation

Datasheet

NDC7001C Global Supplier

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NDC7001C Specifications

Attribute	Attribute Value

Part Number	NDC7001C
Manufacturer	Fairchild
ChipWorker Part#	CW10294633
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Current Rating	350 mA
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	N-Channel, P-Channel, Dual N-Channel, Dual P-Channel
Power Dissipation	960 mW
Threshold Voltage	2.1 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	510 mA
Input Capacitance (Ciss)	20pF @25V(Vds)
Input Power (Max)	700 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	0.96 W
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Size-Length	3 mm
Size-Width	1.7 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The NDC7001C is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage, low current, switching and power supply applications.
High saturation current
High density cell design for low RDS (ON)
Design using copper lead-frame for superior thermal and electrical capabilities

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