NDD03N60ZT4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDD03N60ZT4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW51163736
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 600V 2.6A
Documentation

Datasheet

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NDD03N60ZT4G Specifications

Attribute	Attribute Value

Part Number	NDD03N60ZT4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW51163736
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Drain to Source Resistance (on) (Rds)	3.3 Ω
Polarity	N-Channel
Power Dissipation	61 W
Threshold Voltage	4.5 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	2.60 A
Rise Time	8 ns
Input Capacitance (Ciss)	312pF @25V(Vds)
Input Power (Max)	61 W
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	61W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Amplify electronic signals and switch between them with the help of ON Semiconductor"s NDD03N60ZT4G power MOSFET. Its maximum power dissipation is 61000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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