NDF04N60ZG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDF04N60ZG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW48176966
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Power MOSFET, N Channel, 4.8A, 600V, 1.8Ω, 10V, 3.9V
Documentation

Datasheet

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NDF04N60ZG Specifications

Attribute	Attribute Value

Part Number	NDF04N60ZG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW48176966
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.8 Ω
Polarity	N-Channel
Power Dissipation	30 W
Threshold Voltage	3.9 V
Drain to Source Voltage (Vds)	600 V
Rise Time	9 ns
Input Capacitance (Ciss)	640pF @25V(Vds)
Input Power (Max)	30 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	30W (Tc)
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Size-Length	10.63 mm
Size-Width	4.9 mm
Size-Height	16.12 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the NDF04N60ZG power MOSFET. Its maximum power dissipation is 30000 mW. This product comes in rail packaging to keep individual parts separated and protected. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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