NDP6060L - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDP6060L
Manufacturer

Fairchild
ChipWorker Part#

CW12310515
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 60V 48A 3Pin(3+Tab) TO-220AB Rail
Documentation

Datasheet

NDP6060L Global Supplier

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NDP6060L Specifications

Attribute	Attribute Value

Part Number	NDP6060L
Manufacturer	Fairchild
ChipWorker Part#	CW12310515
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	48.0 A
Power Rating	100 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	25 mΩ
Polarity	N-Channel
Power Dissipation	100 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±16.0 V
Continuous Drain Current (Ids)	48.0 A
Rise Time	320 ns
Input Capacitance (Ciss)	2000pF @25V(Vds)
Input Power (Max)	100 W
Fall Time	161 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	100W (Tc)
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Size-Length	10.67 mm
Size-Width	4.7 mm
Size-Height	16.3 mm
Operating Temperature	-65℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The NDP6060L is a logic level N-channel enhancement-mode power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
Low drive requirements allowing operation directly from logic drivers
Critical DC electrical parameters specified at elevated temperature
High density cell design for extremely low RDS (ON)

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