NDS332P - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDS332P
Manufacturer

Fairchild
ChipWorker Part#

CW18030683
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

FAIRCHILD SEMICONDUCTOR NDS332P MOSFET Transistor, P Channel, 1A, -20V, 300mohm, -4.5V, -600mV
Documentation

Datasheet

NDS332P Global Supplier

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NDS332P Specifications

Attribute	Attribute Value

Part Number	NDS332P
Manufacturer	Fairchild
ChipWorker Part#	CW18030683
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	-20.0 V
Current Rating	-1.00 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	300 mΩ
Polarity	P-Channel
Power Dissipation	500 mW
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	1.00 A
Rise Time	30 ns
Input Capacitance (Ciss)	195pF @10V(Vds)
Input Power (Max)	460 mW
Fall Time	27 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500 mW
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Size-Length	2.92 mm
Size-Width	1.4 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The NDS332P is a P-channel logic level enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications such as battery powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface-mount package.
Very low level gate drive requirements allowing direct operation
Proprietary package design using copper lead-frame for superior thermal and electrical capabilities
High density cell design for extremely low RDS (ON)
Exceptional ON-resistance and maximum DC current capability

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