NDS336P - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDS336P
Manufacturer

Fairchild
ChipWorker Part#

CW83085559
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

MOSFET P-CH 20V 1.2A SSOT3
Documentation

Datasheet

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NDS336P Specifications

Attribute	Attribute Value

Part Number	NDS336P
Manufacturer	Fairchild
ChipWorker Part#	CW83085559
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Case/Package	SOT-23-3
Voltage Rating (DC)	-20.0 V
Current Rating	-1.20 A
Drain to Source Resistance (on) (Rds)	270 mΩ
Polarity	P-Channel
Power Dissipation	500mW (Ta)
Input Capacitance	360 pF
Gate Charge	5.70 nC
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	-20.0 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	1.20 A
Rise Time	29 ns
Input Capacitance (Ciss)	360pF @10V(Vds)
Input Power (Max)	460 mW
Fall Time	23 ns
Power Dissipation (Max)	500mW (Ta)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99
HK STC License	NLR

Product Description

General Description
SuperSOTTM -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics,and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
-1.2A, -20 V, RDS(ON) = 0.27 W@ VGS = -2.7 V
RDS(ON) = 0.2 W@ VGS = -4.5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V.
Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface Mount package.

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