NDT2955 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDT2955
Manufacturer

Fairchild
ChipWorker Part#

CW7386304
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

Trans MOSFET P-CH 60V 2.5A 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

NDT2955 Global Supplier

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NDT2955 Specifications

Attribute	Attribute Value

Part Number	NDT2955
Manufacturer	Fairchild
ChipWorker Part#	CW7386304
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	-60.0 V
Current Rating	-2.50 A
Power Rating	3 W
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.095 Ω
Polarity	P-Channel
Power Dissipation	3 W
Threshold Voltage	2.6 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	-60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	2.50 A
Rise Time	10 ns
Input Capacitance (Ciss)	601pF @30V(Vds)
Input Power (Max)	1.1 W
Fall Time	6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3W (Ta)
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Size-Length	6.5 mm
Size-Width	3.56 mm
Size-Height	1.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99
HK STC License	NLR

Product Description

The NDT2955 from Fairchild is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using Fairchild"s high voltage trench process and suitable for power management applications.
High density cell design for extremely low Rds(ON)
Drain to source voltage (Vds) of -60V
Gate to source voltage of ±20V
Continuous drain current (Id) of -2.5A
Power dissipation (pd) of 3W
Low on state resistance of 163mohm at Vgs -4.5V
Operating temperature range -55°C to 150°C

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