NDT3055L - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDT3055L
Manufacturer

Fairchild
ChipWorker Part#

CW7697959
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

Trans MOSFET N-CH 60V 4A 4Pin(3+Tab) SOT-223 Trans MOSFET N-CH 60V 4A 4Pin(3+Tab) SOT-223
Documentation

Datasheet

NDT3055L Global Supplier

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NDT3055L Specifications

Attribute	Attribute Value

Part Number	NDT3055L
Manufacturer	Fairchild
ChipWorker Part#	CW7697959
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	60.0 V
Current Rating	3.50 A
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.07 Ω
Polarity	N-Channel
Power Dissipation	3 W
Threshold Voltage	1.6 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	4.00 A
Rise Time	7.5 ns
Input Capacitance (Ciss)	345pF @25V(Vds)
Input Power (Max)	1.1 W
Fall Time	7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	3000 mW
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Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.6 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99
HK STC License	NLR

Product Description

The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC converters, PWM motor controls and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
High density cell design for extremely low RDS (ON)
High power and current handling capability
Low drive requirements allowing operation directly from logic drivers

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