NDT452AP - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDT452AP
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2305344
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

P-Channel Enhancement Mode Field Effect Transistor
Documentation

Datasheet

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NDT452AP Specifications

Attribute	Attribute Value

Part Number	NDT452AP
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2305344
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.065 Ω
Power Dissipation	3 W
Threshold Voltage	1.6 V
Drain to Source Voltage (Vds)	30 V
Rise Time	20 ns
Input Capacitance (Ciss)	690pF @15V(Vds)
Input Power (Max)	1.1 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	3 W
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Size-Length	6.5 mm
Size-Width	3.56 mm
Size-Height	1.6 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The NDT452AP is a P-channel logic level enhancement mode Field Effect Transistor using high cell density and DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.
High density cell design for extremely low RDS (ON)
High power and current handling capability

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