NE3210S01 - California Eastern Laboratories
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoNE3210S01
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ManufacturerCalifornia Eastern Laboratories
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ChipWorker Part#CW135764774
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CategoryJFET Transistor, JFET
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PackageSMD-1
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DescriptionTrans JFET 4V 70mA 4Pin Case S01
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DocumentationDatasheet
Payment Methods and Delivery
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NE3210S01 Global Supplier
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NE3210S01 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | NE3210S01 |
| Manufacturer | California Eastern Laboratories |
| ChipWorker Part# | CW135764774 |
| Category | JFET Transistor, JFET |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SMD-1 |
| Frequency | 12 GHz |
| Power Dissipation | 165 mW |
| Breakdown Voltage (Drain to Source) | 4.00 V |
| Continuous Drain Current (Ids) | 10.0 mA |
| Gain | 13.5 dB |
| Test Current | 10 mA |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Voltage Rating | 4 V |
| expand all | |
| Size-Height | 1.5 mm |
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
Product Description
- DESCRIPTION
- NEC"s NE3210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE 3210S01 is housed in a low cost plastic package which is available in tape and reel.
- NEC"s stringent quality assurance and test procedures assure the highest reliability and performance.
- FEATURES
- • SUPER LOW NOISE FIGURE:
- 0.35 dB TYP at f = 12 GHz
- • HIGH ASSOCIATED GAIN:
- 13.5 dB TYP at f = 12 GHz
- • GATE LENGTH: LG ≤ 0.20 μm
- • GATE WIDTH: WG = 160 μm
Delivery
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Ordering Information
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