NGTB03N60R2DT4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB03N60R2DT4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW7683637
Category

IGBT Transistor, IGBT Module
RoHS

Lead free / RoHS Compliant
Description

Trans IGBT Chip N-CH 600V 9A 49000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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NGTB03N60R2DT4G Specifications

Attribute	Attribute Value

Part Number	NGTB03N60R2DT4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW7683637
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Power Dissipation	49 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	65 ns
Input Power (Max)	49 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	49000 mW
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

This NGTB03N60R2DT4G IGBT transistor from ON Semiconductor is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 49000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single dual collector configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

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