NGTB15N60S1EG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB15N60S1EG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW22132444
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 650V 30A 117000mW 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

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NGTB15N60S1EG Specifications

Attribute	Attribute Value

Part Number	NGTB15N60S1EG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW22132444
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Power Dissipation	117 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	270 ns
Input Power (Max)	117 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	117 W
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Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	15.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NGTB15N60S1EG is an Insulated Gate Bipolar Transistor features a robust and non-punch through (NPT) Trench construction, provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.
Low saturation voltage resulting in low conduction loss
Low switching loss in higher frequency applications
Soft fast reverse recovery diode
Excellent current versus package size performance density
5µs Short-circuit capability

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