NGTB20N60L2TF1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB20N60L2TF1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW62025106
Category

IGBT Transistor, IGBT Module
Package

TO-3-3
Description

Trans IGBT Chip N-CH 600V 40A 64000mW 3Pin(3+Tab) TO-3pF Tube
Documentation

Datasheet

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NGTB20N60L2TF1G Specifications

Attribute	Attribute Value

Part Number	NGTB20N60L2TF1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW62025106
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Halogen Free Status	Halogen Free
Power Dissipation	64000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	70 ns
Input Power (Max)	64 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	64000 mW
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Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This NGTB20N60L2TF1G IGBT transistor from ON Semiconductor will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 64000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

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