NGTB25N120FLWG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB25N120FLWG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW41149200
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 50A 192000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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NGTB25N120FLWG Specifications

Attribute	Attribute Value

Part Number	NGTB25N120FLWG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW41149200
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Power Dissipation	192 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	240 ns
Input Power (Max)	192 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	192000 mW
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.08 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NGTB25N120FLWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and Trench construction, provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free-wheeling diode with a low forward voltage.
Low saturation voltage using Trench with field-stop technology
Low switching loss - Reduces system power dissipation
Low gate charge
Reduces system power dissipation
Robust circuit performance
10µs Short-circuit capability

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