NGTB30N120IHSWG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB30N120IHSWG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW100013157
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 60A 192000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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NGTB30N120IHSWG Specifications

Attribute	Attribute Value

Part Number	NGTB30N120IHSWG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW100013157
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Power Dissipation	192 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	192 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	192 W
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.08 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NGTB30N120IHSWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and field-stop (FS) Trench construction and provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
Low saturation voltage using Trench with field-stop technology
Low switching loss - Reduces system power dissipation
Optimized for low case temperature in IH cooker application
Low gate charge
Low conduction loss

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