NGTB30N135IHRWG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB30N135IHRWG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW25189819
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1350V 60A 394000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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NGTB30N135IHRWG Specifications

Attribute	Attribute Value

Part Number	NGTB30N135IHRWG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW25189819
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Power Dissipation	394 W
Breakdown Voltage (Collector to Emitter)	1350 V
Input Power (Max)	394 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	394 W
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Size-Length	16.25 mm
Size-Width	5.3 mm
Size-Height	21.4 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

This powerful and secure NGTB30N135IHRWG IGBT transistor from ON Semiconductor will make sure your circuit works properly. Its maximum power dissipation is 394000 mW. It has a maximum collector emitter voltage of 1350 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.

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