NGTB40N120FL2WG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB40N120FL2WG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW3916596
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 80A 652000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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NGTB40N120FL2WG Specifications

Attribute	Attribute Value

Part Number	NGTB40N120FL2WG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW3916596
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	535 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	240 ns
Input Power (Max)	535 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	535 W
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Size-Length	16.25 mm
Size-Width	5.3 mm
Size-Height	21.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

You won"t need to worry about any lagging in your circuit with this NGTB40N120FL2WG IGBT transistor from ON Semiconductor. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 652000 mW. This product comes in rail packaging to keep individual parts separated and protected. This device is made with field stop ii|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.

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