NGTB40N120LWG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB40N120LWG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW56493583
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 80A 260000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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NGTB40N120LWG Specifications

Attribute	Attribute Value

Part Number	NGTB40N120LWG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW56493583
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Power Dissipation	260 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	260 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	260 W
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.08 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Use the NGTB40N120LWG IGBT transistor from ON Semiconductor as an electronic switch. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 1200 V. This product comes in rail packaging to keep individual parts separated and protected. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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