NGTB75N65FL2WG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB75N65FL2WG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2686826
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 650V 100A 595000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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NGTB75N65FL2WG Specifications

Attribute	Attribute Value

Part Number	NGTB75N65FL2WG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2686826
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	595 W
Breakdown Voltage (Collector to Emitter)	650 V
Reverse recovery time	80 ns
Input Power (Max)	595 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	595000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NGTB75N65FL2WG IGBT transistor from ON Semiconductor will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 595000 mW. This product comes in rail packaging to keep individual parts separated and protected. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.

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