NID5003NT4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NID5003NT4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW93758136
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 42V 20A
Documentation

Datasheet

NID5003NT4G Global Supplier

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NID5003NT4G Specifications

Attribute	Attribute Value

Part Number	NID5003NT4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW93758136
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	42.0 V
Current Rating	20.0 A
Number of Outputs	1 Output
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	0.042 Ω
Polarity	N-Channel
Power Dissipation	2.3 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	42 V
Breakdown Voltage (Drain to Source)	42.0 V
Breakdown Voltage (Gate to Source)	±14.0 V
Continuous Drain Current (Ids)	20.0 A
Output Current (Max)	20 A
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

This NID5003NT4G power MOSFET from ON Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 2300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

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