NJL4281DG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NJL4281DG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW109953396
Category

BJT Transistor, BJT
Package

TO-264-5
Description

TO-264 NPN 350V 15A
Documentation

Datasheet

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NJL4281DG Specifications

Attribute	Attribute Value

Part Number	NJL4281DG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW109953396
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	5 Pin
Case/Package	TO-264-5
Voltage Rating (DC)	260 V
Current Rating	15.0 A
Number of Positions	5 Position
Polarity	NPN
Power Dissipation	230 W
Gain Bandwidth Product	35 MHz
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	15A
hFE Min	80 @5A, 5V
Input Power (Max)	230 W
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	230000 mW
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Size-Length	19.89 mm
Size-Width	4.89 mm
Size-Height	25.98 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Bipolar (BJT) Transistor NPN + Diode (Isolated) 350V 15A 35MHz 230W Through Hole TO-264

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