NJT4030PT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NJT4030PT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW3079577
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 PNP 40V 3A
Documentation

Datasheet

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NJT4030PT1G Specifications

Attribute	Attribute Value

Part Number	NJT4030PT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW3079577
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	160 MHz
Number of Positions	4 Position
Polarity	PNP
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	3A
hFE Min	200 @1A, 1V
Input Power (Max)	2 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.63 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The NJT4030PT1G is a 3A bipolar PNP Power Transistor ideal device for high speed switching applications where power saving is a concern. It is the combination of low saturation voltage and high gain.
Low collector-emitter saturation voltage
High DC current gain
High current-gain bandwidth product
Halogen-free
Minimized power loss
Very low current requirements
Ideal for high frequency designs
AEC-Q101 qualified and PPAP capable

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