NJT4030PT3G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NJT4030PT3G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW15244300
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 PNP 40V 3A
Documentation

Datasheet

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NJT4030PT3G Specifications

Attribute	Attribute Value

Part Number	NJT4030PT3G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW15244300
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	160 MHz
Number of Positions	4 Position
Polarity	PNP
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	3A
hFE Min	200 @1A, 1V
Input Power (Max)	2 W
DC Current Gain (hFE)	220
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

If your circuit"s specifications require a device that can handle high levels of voltage, ON Semiconductor"s PNP NJT4030PT3G general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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