NJVMJD31CT4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NJVMJD31CT4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW15679600
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK NPN 100V 3A
Documentation

Datasheet

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NJVMJD31CT4G Specifications

Attribute	Attribute Value

Part Number	NJVMJD31CT4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW15679600
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	3 MHz
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	15 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	3A
hFE Min	25 @1A, 4V
Input Power (Max)	1.56 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	15000 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NJVMJD31CT4G is a 3A NPN bipolar Power Transistor designed for general purpose amplifier and low speed switching applications.
Complementary device
Electrically similar to popular TIP31 and TIP32 series
AEC-Q101 qualified and PPAP capable

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