NJVNJD35N04T4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NJVNJD35N04T4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW63003717
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK NPN 350V 4A
Documentation

Datasheet

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NJVNJD35N04T4G Specifications

Attribute	Attribute Value

Part Number	NJVNJD35N04T4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW63003717
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Halogen Free Status	Halogen Free
Polarity	NPN
Power Dissipation	45 W
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	4A
hFE Min	2000
Input Power (Max)	45 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Gain Bandwidth	90MHz (Min)
Power Dissipation (Max)	45000 mW
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Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This high voltage, bipolar power Darlington transistor has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control.
Features | | Benefits
---|---|---
| | | | |
Exceptional Safe Operating Area
| |
Reliable Performance at Higher Powers
High VCE
| |
Designed for Inductive Loads
High Current Gain
| |
Very Low Current Requirements
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
| |
These are PbFree Devices
| |

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