NJW21193G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NJW21193G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW13477646
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

TO-3P PNP 250V 16A
Documentation

Datasheet

NJW21193G Global Supplier

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NJW21193G Specifications

Attribute	Attribute Value

Part Number	NJW21193G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW13477646
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Frequency	4 MHz
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	250 V
Continuous Collector Current	16A
hFE Min	20
hFE Max	70
Input Power (Max)	200 W
DC Current Gain (hFE)	8
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	200 mW
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Size-Length	15.8 mm
Size-Width	5 mm
Size-Height	20.1 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The NJW21194 Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
Features | | Benefits
---|---|---
| | | | |
Exceptional safe operating area
| |
Reliable performance at higher powers

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