NSB1706DMW5T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSB1706DMW5T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW19622222
Category

BJT Transistor, BJT
Package

SC-70-5
Description

SC-88A NPN+PNP 50V 100mA
Documentation

Datasheet

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NSB1706DMW5T1G Specifications

Attribute	Attribute Value

Part Number	NSB1706DMW5T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW19622222
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SC-70-5
Voltage Rating (DC)	50.0 V
Current Rating	100 mA
Polarity	NPN
Power Dissipation	0.385 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	80 @5mA, 10V
hFE Max	80
Input Power (Max)	250 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	385 mW
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Apply the applications of a traditional bi polar junction transistor, in digital circuits with this npn and PNP NSB1706DMW5T1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual common emitter configuration.

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