NSBC114YPDXV6T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSBC114YPDXV6T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW6065050
Category

BJT Transistor, BJT
Package

SOT-563-6
Description

SOT-563 NPN+PNP 50V 100mA
Documentation

Datasheet

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NSBC114YPDXV6T1G Specifications

Attribute	Attribute Value

Part Number	NSBC114YPDXV6T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW6065050
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-563-6
Voltage Rating (DC)	50.0 V
Current Rating	100 mA
Polarity	NPN, PNP
Power Dissipation	0.5 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	80 @5mA, 10V
Input Power (Max)	500 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500 mW
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Are you in need of the digital form of a traditional bipolar junction transistor? The npn and PNP NSBC114YPDXV6T1G digital transistor from ON Semiconductor is what you"ve been looking for. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

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