NSS1C201MZ4T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSS1C201MZ4T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW7777941
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 NPN 100V 2A
Documentation

Datasheet

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NSS1C201MZ4T1G Specifications

Attribute	Attribute Value

Part Number	NSS1C201MZ4T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW7777941
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	100 MHz
Halogen Free Status	Halogen Free
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	2 W
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	2A
hFE Min	120 @500mA, 2V
hFE Max	150
Input Power (Max)	800 mW
DC Current Gain (hFE)	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Compared to other transistors, the NPN NSS1C201MZ4T1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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