NSS1C301ET4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSS1C301ET4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW47142842
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK NPN 100V 3A
Documentation

Datasheet

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NSS1C301ET4G Specifications

Attribute	Attribute Value

Part Number	NSS1C301ET4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW47142842
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	120 MHz
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	33 W
Gain Bandwidth Product	120 MHz
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	3A
hFE Min	120 @1A, 2V
hFE Max	360
Input Power (Max)	2.1 W
DC Current Gain (hFE)	80
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	2100 mW
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Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The versatility of this NPN NSS1C301ET4G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1400 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.

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