NSS30101LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSS30101LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW16497419
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23-3 NPN 30V 1A
Documentation

Datasheet

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NSS30101LT1G Specifications

Attribute	Attribute Value

Part Number	NSS30101LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW16497419
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	100 MHz
Voltage Rating (DC)	30.0 V
Current Rating	1.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	710 mW
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	1A
hFE Min	300 @500mA, 5V
hFE Max	900
Input Power (Max)	310 mW
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	310 mW
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Size-Length	3.04 mm
Size-Width	2.64 mm
Size-Height	1.11 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
Minimum Packing Quantity	3000
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NSS30101LT1G is a 2A NPN Bipolar Transistor designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. It is miniature surface-mount device featuring ultra-low saturation voltage VCE(sat) and high current gain capability.
High current
ESD robust
High current gain
High cut-off frequency
Low profile package
Linear gain (Beta)

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