NSS35200MR6T1G - ON Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoNSS35200MR6T1G
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ManufacturerON Semiconductor
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ChipWorker Part#CW22432192
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CategoryBJT Transistor, BJT
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PackageSOT-23-6
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DescriptionTSOP-6 PNP 35V 2A
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DocumentationDatasheet
Payment Methods and Delivery
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NSS35200MR6T1G Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | NSS35200MR6T1G |
| Manufacturer | ON Semiconductor |
| ChipWorker Part# | CW22432192 |
| Category | BJT Transistor, BJT |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-23-6 |
| Frequency | 100 MHz |
| Voltage Rating (DC) | -35.0 V |
| Current Rating | -2.00 A |
| Halogen Free Status | Halogen Free |
| Polarity | PNP |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 35 V |
| Continuous Collector Current | 2A |
| hFE Min | 100 @1.5A, 1.5V |
| hFE Max | 400 |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1000 mW |
| expand all | |
| Size-Width | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Minimum Packing Quantity | 3000 |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| ECCN Code | EAR99 |
Product Description
- Implement this versatile PNP NSS35200MR6T1G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 35 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Delivery
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Ordering Information
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