NSS40301MZ4T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSS40301MZ4T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW16383419
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 NPN 40V 3A
Documentation

Datasheet

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NSS40301MZ4T1G Specifications

Attribute	Attribute Value

Part Number	NSS40301MZ4T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW16383419
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	215 MHz
Halogen Free Status	Halogen Free
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	3A
hFE Min	200 @1A, 1V
Input Power (Max)	2 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN NSS40301MZ4T1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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