NSS40302PDR2G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSS40302PDR2G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW21391507
Category

BJT Transistor, BJT
Package

SOIC-8
Description

SOIC NPN+PNP 40V 3A
Documentation

Datasheet

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NSS40302PDR2G Specifications

Attribute	Attribute Value

Part Number	NSS40302PDR2G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW21391507
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Frequency	100 MHz
Halogen Free Status	Halogen Free
Number of Positions	8 Position
Polarity	NPN+PNP
Power Dissipation	783 mW
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	3A
hFE Min	180 @1A, 2V
hFE Max	200 @10mA, 2V
Input Power (Max)	653 mW
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	783 mW
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

**Dual NPN/PNP Transistors, ON Semiconductor**
Dual transistor packages each containing an NPN and a PNP device

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