NSS60600MZ4T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSS60600MZ4T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW13015736
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 PNP 60V 6A
Documentation

Datasheet

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NSS60600MZ4T1G Specifications

Attribute	Attribute Value

Part Number	NSS60600MZ4T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW13015736
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	100 MHz
Halogen Free Status	Halogen Free
Number of Positions	4 Position
Polarity	PNP
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	6A
hFE Min	120 @1A, 2V
Input Power (Max)	800 mW
DC Current Gain (hFE)	70
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The NSS60600MZ4T1G is a 6A PNP Bipolar Transistor ideal for high speed switching applications where power saving is a concern. It is a combination of low saturation voltage and high gain.
Low collector-emitter saturation voltage
Minimized power loss
High DC current gain
Very low current requirements
High current-gain bandwidth product
Ideal for high frequency designs
Superior gain linearity
Minimal distortion
Halogen-free
AECQ101 qualified and PPAP capable

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