NSV1C300ET4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSV1C300ET4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW41307053
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK PNP 100V 3A
Documentation

Datasheet

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NSV1C300ET4G Specifications

Attribute	Attribute Value

Part Number	NSV1C300ET4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW41307053
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	100 MHz
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	33 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	3A
hFE Min	120
hFE Max	360
DC Current Gain (hFE)	120
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	33 W
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The versatility of this PNP NSV1C300ET4G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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