NSV1C301ET4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSV1C301ET4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW58888850
Category

BJT Transistor, BJT
Package

DPAK-3
Description

DPAK NPN 100V 3A
Documentation

Datasheet

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NSV1C301ET4G Specifications

Attribute	Attribute Value

Part Number	NSV1C301ET4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW58888850
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	DPAK-3
Frequency	120 MHz
Halogen Free Status	Halogen Free
Polarity	NPN
Power Dissipation	2.1 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	3A
hFE Min	120
hFE Max	360
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1400 mW
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Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Implement this versatile NPN NSV1C301ET4G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1400 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.

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