NSV60200LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSV60200LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW44495430
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 PNP 60V 2A
Documentation

Datasheet

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NSV60200LT1G Specifications

Attribute	Attribute Value

Part Number	NSV60200LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW44495430
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	100 MHz
Halogen Free Status	Halogen Free
Polarity	PNP
Power Dissipation	0.54 W
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	2A
hFE Min	150 @500mA, 2V
Input Power (Max)	460 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	540 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Jump-start your electronic circuit design with this versatile PNP NSV60200LT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.

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