NSV60600MZ4T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSV60600MZ4T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW21315637
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 PNP 60V 6A
Documentation

Datasheet

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NSV60600MZ4T1G Specifications

Attribute	Attribute Value

Part Number	NSV60600MZ4T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW21315637
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	100 MHz
Halogen Free Status	Halogen Free
Number of Positions	4 Position
Polarity	PNP
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	6A
hFE Min	120 @1A, 2V
Input Power (Max)	800 mW
DC Current Gain (hFE)	120
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Compared to other transistors, the PNP NSV60600MZ4T1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.

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