NSVBCP69T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSVBCP69T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW6604488
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 PNP 20V 1A
Documentation

Datasheet

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NSVBCP69T1G Specifications

Attribute	Attribute Value

Part Number	NSVBCP69T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW6604488
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	60 MHz
Polarity	PNP
Power Dissipation	1.5 W
Breakdown Voltage (Collector to Emitter)	20 V
Continuous Collector Current	1A
hFE Min	85 @500mA, 1V
Input Power (Max)	1.5 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	1500 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
HK STC License	NLR

Product Description

MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.
Features
•High Current: IC= −1.0 A
•The SOT−223 Package can be soldered using wave or reflow.
•SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
•NPN Complement is BCP68

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