NSVJ3557SA3T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSVJ3557SA3T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW51288564
Category

JFET Transistor, JFET
Package

SOT-23-3
Description

Trans JFET N-CH 15V 50mA 3Pin SC-59 T/R
Documentation

Datasheet

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NSVJ3557SA3T1G Specifications

Attribute	Attribute Value

Part Number	NSVJ3557SA3T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW51288564
Category	JFET Transistor, JFET
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Power Dissipation	200 mW
Drain to Source Voltage (Vds)	15 V
Breakdown Voltage (Drain to Source)	15 V
Breakdown Voltage (Gate to Source)	15 V
Reverse Breakdown Voltage	15 V
Input Capacitance (Ciss)	10pF @5V(Vds)
Input Power (Max)	200 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The NSVJ3557SA3 is a Single N-Channel Junction FET featuring Low Noise Amplification (LNA) suitable for automotive antenna applications. This device features high forward transfer admittance with low noise characteristics and provides high ESD immunity in comparison to current JFETs. This device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
Features | | Benefits
---|---|---
| | | | |
Pb-Free and RoHS compliance
| |
Environmental Consideration
Small Package : 2.9 x 2.5 x 1.1 mm
| |
This Small Package Enables Sets to be Smaller and Thinner
Large forward transfer admittance and low noise figure
| |
Enabling the reception of radio waves in the small
High power dissipation
| |
Easy to design because of the voltage margin
Small Ciss
| |
AEC-Q101 qualified and PPAP capable
| |

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