NTD12N10T4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTD12N10T4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW46937959
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 100V 12A 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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NTD12N10T4G Specifications

Attribute	Attribute Value

Part Number	NTD12N10T4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW46937959
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	100 V
Current Rating	12.0 A
Drain to Source Resistance (on) (Rds)	165 mΩ
Polarity	N-Channel
Power Dissipation	1.76 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	12.0 A
Rise Time	30 ns
Input Capacitance (Ciss)	550pF @25V(Vds)
Input Power (Max)	1.28 W
Fall Time	32 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.28W (Ta), 56.6W (Tc)
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This NTD12N10T4G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1760 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.

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