NTD2955T4G - ON Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoNTD2955T4G
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ManufacturerON Semiconductor
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ChipWorker Part#CW478012
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CategoryMOSFET, MOSFET Transistor
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RoHSLead free / RoHS Compliant
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DescriptionPower MOSFET -60V -12A 180mOhm Single P-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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DocumentationDatasheet
Payment Methods and Delivery
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NTD2955T4G Global Supplier
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NTD2955T4G Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | NTD2955T4G |
| Manufacturer | ON Semiconductor |
| ChipWorker Part# | CW478012 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -12.0 A |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.155 Ω |
| Polarity | P-Channel |
| Power Dissipation | 55 W |
| Threshold Voltage | 2.8 V |
| Input Capacitance | 500 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 12.0 A, 12.0 mA |
| Rise Time | 45 ns |
| Input Capacitance (Ciss) | 750pF @25V(Vds) |
| Input Power (Max) | 55 W |
| Fall Time | 48 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 55 W |
| expand all | |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| ECCN Code | EAR99 |
Product Description
- The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
- Avalanche energy specified
- IDSS and VDS (on) specified at elevated temperature
- ±20V Gate to source voltage
- 2.73°C/W Thermal resistance, junction to case
Delivery
Chipworker Certification
Ordering Information
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