NTD5867NLT4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTD5867NLT4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1239234
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

MOSFET N-CH 60V 18A 43MOHM DPAK
Documentation

Datasheet

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NTD5867NLT4G Specifications

Attribute	Attribute Value

Part Number	NTD5867NLT4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1239234
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.026 Ω
Polarity	N-Channel
Power Dissipation	36 W
Threshold Voltage	1.8 V
Input Capacitance	675 pF
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Rise Time	12.6 ns
Input Capacitance (Ciss)	675pF @25V(Vds)
Input Power (Max)	36 W
Fall Time	2.4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	36W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
HK STC License	NLR

Product Description

The NTD5867NLT4G from On Semiconductor is a surface mount, 60V N channel power MOSFET in DPAK package. This device features high current capability, low RDS (on) and avalanche tested thus resulting in minimal conduction losses, robust load performance and voltage overstress safeguard. This MOSFET is used for LED backlighting, DC to DC converter, motor driver and UPS inverter.
Drain to source voltage (Vds) is 600V
Gate to source voltage of ±20V(continuous)
Continuous drain current (Id) is 20A
Power dissipation (Pd) is 36W
Operating junction temperature range from -55°C to 150°C
Gate threshold voltage of 1.8V
Low on state resistance of 26mohm at Vgs 10V

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