NTD6416ANLT4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTD6416ANLT4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4691593
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 19A
Documentation

Datasheet

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NTD6416ANLT4G Specifications

Attribute	Attribute Value

Part Number	NTD6416ANLT4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4691593
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	68 mΩ
Polarity	N-Channel
Power Dissipation	71 W
Threshold Voltage	2.2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	19.0 A
Rise Time	16 ns
Input Capacitance (Ciss)	1000pF @25V(Vds)
Input Power (Max)	71 W
Fall Time	40 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	71W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20

Product Description

The NTD6416ANLT4G is a N-channel Power MOSFET offers 100V drain source voltage and 19A continuous drain current.
Lower RDS (ON)
High current capability
100% Avalanche tested
-55 to 175°C Operating junction temperature range

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