NTF2955T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTF2955T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW700630
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

Power MOSFET -60V -2.6A 170mOhm Single P-Channel SOT-223, SOT-223 (TO-261) 4 LEAD, 1000-REEL
Documentation

Datasheet

NTF2955T1G Global Supplier

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NTF2955T1G Specifications

Attribute	Attribute Value

Part Number	NTF2955T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW700630
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	-60.0 V
Current Rating	-2.60 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.145 Ω
Polarity	P-Channel
Power Dissipation	1 W
Threshold Voltage	4 V
Input Capacitance	492 pF
Gate Charge	14.3 nC
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	2.60 A, 2.60 mA
Rise Time	7.6 ns
Input Capacitance (Ciss)	492pF @25V(Vds)
Input Power (Max)	1 W
Fall Time	38 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2300 mW
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Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.57 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NTF2955T1G is a P-channel Power MOSFET withstands high energy in avalanche and communication modes.
±20V Gate-source voltage

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