NTF6P02T3G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTF6P02T3G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW15068800
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

SOT-223P-CH 20V 10A
Documentation

Datasheet

NTF6P02T3G Global Supplier

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NTF6P02T3G Specifications

Attribute	Attribute Value

Part Number	NTF6P02T3G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW15068800
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	-20.0 V
Current Rating	-6.00 A
Drain to Source Resistance (on) (Rds)	0.05 Ω
Polarity	P-Channel
Power Dissipation	8.3 W
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	10.0 A
Rise Time	25.0 ns
Input Capacitance (Ciss)	1200pF @16V(Vds)
Input Power (Max)	8.3 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	8.3W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

As an alternative to traditional transistors, the NTF6P02T3G power MOSFET from ON Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 8300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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