NTHC5513T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTHC5513T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW24866579
Category

MOSFET, MOSFET Transistor
Package

1206
Description

Trans MOSFET N/P-CH 20V 2.9A/2.2A 8Pin Chip FET T/R
Documentation

Datasheet

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NTHC5513T1G Specifications

Attribute	Attribute Value

Part Number	NTHC5513T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW24866579
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package (SI)	3216
Case/Package	1206
Voltage Rating (DC)	20.0 V
Current Rating	3.10 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.058 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	1.1 W
Threshold Voltage	600 mV
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Gate to Source)	±12.0 V
Continuous Drain Current (Ids)	3.90 A
Rise Time	13.0 ns
Input Capacitance (Ciss)	180pF @10V(Vds)
Input Power (Max)	1.1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.1 W
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Size-Length	3.1 mm
Size-Width	1.7 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

As an alternative to traditional transistors, the NTHC5513T1G power MOSFET from ON Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.

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